This study is devoted to the investigation of electrical properties of multi-walled carbon nanotube (MWCNT)-contaminated Cu-Se-Te-In chalcogenide glassy composite in the temperature range 303–373 K and frequency interval from 1 Hz to 1 MHz. The MWCNT/chalcogenide glass was characterized by means of X-ray diffractometer, field emission scanning electron microscope, impedance spectroscopy and electrical measurements. Electrical conductivity was increased by 10–100 times of magnitude by adding 1 and 2 wt% of MWCNT to it, changing the behaviour from insulator to the semiconductor. This rapid change in the electrical conductivity for carbon nanotube-added glasses is due to the highly conducting behaviour of carbon nanotubes. The data observed from dc conductivity measurement in the temperature range 303–373 K suggest that thermally activated hopping is the dominant conduction mechanism between localized states in band tails, which is explained by Mott’s model. The temperature-dependent relaxation phenomenon has also been examined by a detailed analysis of impedance spectra.

中文翻译：

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添加CNT的Cu5Se75Te10In10硫族化物体系交流电导机制及阻抗谱研究

本研究致力于研究多壁碳纳米管 (MWCNT) 污染的 Cu-Se-Te-In 硫属化物玻璃复合材料在 303-373 K 温度范围和 1 Hz 至 1 MHz 频率间隔内的电性能。通过 X 射线衍射仪、场发射扫描电子显微镜、阻抗谱和电学测量对 MWCNT/硫属化物玻璃进行表征。通过向其中添加 1 和 2 重量％的 MWCNT，电导率增加了 10-100 倍，改变了从绝缘体到半导体的行为。添加碳纳米管的玻璃的电导率的这种快速变化是由于碳纳米管的高度导电行为。在 303-373 K 温度范围内从直流电导率测量中观察到的数据表明热激活跳跃是带尾局部状态之间的主要传导机制，这可以通过莫特模型来解释。通过对阻抗谱的详细分析，还研究了与温度相关的弛豫现象。