Lead magnesium tungsten titanate PbMg[Formula: see text] Ti[Formula: see text]W[Formula: see text]O3 was prepared by adopting a high-temperature solid-state reaction method. The sample has tetragonal crystal structure having average crystallite size 45.1325[Formula: see text]nm calculated using Scherer’s relation and the average grain size is about 40[Formula: see text]nm from Scanning Electron Microscope (SEM) measurement. Measurements of dielectric permittivity ([Formula: see text]) and loss ([Formula: see text]) have been investigated, both as a function of frequency (1[Formula: see text]kHz to 5[Formula: see text]MHz) and temperature (25–[Formula: see text]C) and the results showed the presence of interfacial polarization of the material. The dielectric spectra with frequency and temperature suggest that the prepared sample is semiconducting in nature following the NTCR behavior. The complex impedance results showed the contribution of grain and grain boundaries in the conduction mechanism. The activation energies were determined from the ac conductivity data in the temperature ranges of 200–[Formula: see text]C and 360–[Formula: see text]C. It has been observed that with the rise of frequency and temperature, the activation energy increases in the sample. The greater value of the activation energy always supports the conduction mechanism due to hopping of the charge carriers. The semicircular arcs of Cole–Cole plots confirm that the sample is semiconducting in nature which supports our dielectric results.

中文翻译：

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多晶PbMg1∕3 Ti1∕3W1∕3O3钨钙钛矿的结构和介电性能研究

钨钛酸铅镁 PbMg[化学式：见正文] Ti[化学式：见正文]W[化学式：见正文]O3采用高温固相反应法制备。该样品具有四方晶体结构，其平均微晶尺寸为45.1325[公式：参见文本]nm，使用Scherer关系计算，并且平均晶粒尺寸为约40[公式：参见文本]nm，来自扫描电子显微镜(SEM)测量。已经研究了介电常数（[公式：见文本]）和损耗（[公式：见文本]）的测量，两者都是频率的函数（1[公式：见文本]kHz至5[公式：见文本]MHz ）和温度（25-[公式：见正文]C），结果表明材料存在界面极化。具有频率和温度的介电光谱表明，制备的样品在 NTCR 行为之后本质上是半导体的。复阻抗结果显示了晶粒和晶界在传导机制中的贡献。活化能由 200-[公式：见正文]C 和 360-[公式：见正文]C 温度范围内的交流电导率数据确定。已经观察到随着频率和温度的升高，样品中的活化能增加。由于电荷载流子的跳跃，较大的活化能值总是支持传导机制。Cole-Cole 图的半圆弧证实样品本质上是半导体，这支持了我们的介电结果。已经观察到随着频率和温度的升高，样品中的活化能增加。由于电荷载流子的跳跃，较大的活化能值总是支持传导机制。Cole-Cole 图的半圆弧证实样品本质上是半导体，这支持了我们的介电结果。已经观察到随着频率和温度的升高，样品中的活化能增加。由于电荷载流子的跳跃，较大的活化能值总是支持传导机制。Cole-Cole 图的半圆弧证实样品本质上是半导体，这支持了我们的介电结果。