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Self-aligned local contact opening and n+ diffusion by single-step laser doping from POx/Al2O3 passivation stacks
Solar Energy Materials and Solar Cells ( IF 6.9 ) Pub Date : 2020-11-01 , DOI: 10.1016/j.solmat.2020.110717
Lachlan E. Black , Marco Ernst , Roel Theeuwes , Jimmy Melskens , Daniel Macdonald , W.M.M.(Erwin) Kessels

Abstract Laser doping is a promising route to realise industrially compatible processing of local contacts for high-efficiency solar cells, especially when the same film acts as both dopant source and passivation layer. In this work we demonstrate simultaneous local contact opening and n+ laser doping of silicon from positively charged POx/Al2O3 thin-film stacks, which also provide outstanding passivation of n-type silicon surfaces. Local n+ doped regions with sheet resistance ranging from 35 to ~540 Ω/□ are formed using single nanosecond laser pulses with varying fluence. ECV profiling shows net n-type doping in all cases, confirmed by SIMS profiling to be due to phosphorus from the POx layer. J0 of metallised laser-doped regions is consistent with values achieved for state-of-the-art furnace diffusions with similar sheet resistance, confirming that laser-induced recombination-active defects are avoided. A minimum J0 of 540 fA cm−2 is obtained for metallised laser-doped regions formed from POx/Al2O3 passivation stacks having J0 of 2.5 fA cm−2. The combination of outstanding passivation of uncontacted n-type regions offered by POx/Al2O3, with self-aligned formation of locally-diffused contact openings via single-step laser processing, opens up exciting possibilities for simplified fabrication of high-efficiency cell structures.

中文翻译:

通过 POx/Al2O3 钝化堆栈的单步激光掺杂自对准局部接触开口和 n+ 扩散

摘要 激光掺杂是实现高效太阳能电池局部接触工业兼容处理的一条有前途的途径,特别是当同一薄膜同时作为掺杂源和钝化层时。在这项工作中,我们展示了从带正电的 POx/Al2O3 薄膜堆栈同时进行局部接触打开和 n+ 激光掺杂的硅,这也为 n 型硅表面提供了出色的钝化。局部 n+ 掺杂区域的薄层电阻范围为 35 至 ~540 Ω/□,使用具有不同通量的单个纳秒激光脉冲形成。ECV 分析在所有情况下都显示净 n 型掺杂,SIMS 分析证实这是由于来自 POx 层的磷。金属化激光掺杂区域的 J0 与具有相似薄层电阻的最先进的熔炉扩散所获得的值一致,确认避免了激光诱导的复合活性缺陷。对于由具有 2.5 fA cm-2 的 J0 的 POx/Al2O3 钝化叠层形成的金属化激光掺杂区域,获得的最小 J0 为 540 fA cm-2。POx/Al2O3 提供的非接触 n 型区域的出色钝化与通过单步激光加工自对准形成局部扩散接触开口相结合,为简化高效电池结构的制造开辟了令人兴奋的可能性。
更新日期:2020-11-01
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