Si optical phase shifters are key components for efficient phase modulation utilizing carrier modulation. Among many structures for carrier modulation in them, a semiconductor-insulator-semiconductor (SIS) capacitor can achieve high phase modulation efficiency because of its large carrier accumulation. However, due to the limitation caused by relatively small plasma dispersion in Si, its size and voltage for the $\pi $ phase shift are large to integrate into conventional CMOS technology. To enhance its phase modulation efficiency, material engineering of a SIS capacitor is indispensable. Although semiconductor engineering has been proved to realize efficient phase modulation, there are few reports on the insulator engineering of a SIS capacitor for efficient phase modulation. Therefore, we have introduced new functionalities for a SIS optical phase shifter using insulator engineering. In this paper, we have investigated the charge enhancement effect in a SIS capacitor with ferroelectric (FE) materials utilized by the negative capacitance (NC) effect. We will discuss the design of an NC SIS optical phase modulator to enhance this effect for a new efficient phase modulation scheme.

中文翻译：

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利用负电容效应的电荷增强铁电SIS光学移相器的研究

硅光移相器是利用载波调制进行有效相位调制的关键组件。在众多的载流子调制结构中，半导体-绝缘体-半导体(SIS)电容器由于载流子积累量大，可以实现高相位调制效率。然而，由于Si中等离子体相对较小的扩散所造成的限制，它的尺寸和电压对于$\pi $相移都很大，无法集成到传统的CMOS技术中。为了提高相位调制效率，SIS 电容器的材料工程是必不可少的。虽然半导体工程已被证明可以实现有效的相位调制，但很少有关于 SIS 电容器的绝缘体工程用于有效相位调制的报道。所以，我们已经为使用绝缘体工程的 SIS 光学移相器引入了新功能。在本文中，我们研究了负电容 (NC) 效应利用铁电 (FE) 材料的 SIS 电容器中的电荷增强效应。我们将讨论 NC SIS 光相位调制器的设计，以增强新的高效相位调制方案的这种效果。