B-doped hydrogenated amorphous silicon (a-Si:H) films with various doping concentrations were prepared by a plasma-enhanced chemical vapor deposition (PECVD) technique. After thermal annealing, the as-deposited samples, B-doped silicon nanocrystals (Si NCs), were obtained in the films. The electronic properties of B-doped Si NC films with various doping concentrations combined with the microstructural characterization were investigated. A significant improvement of Hall mobility rising to the maximum of 17.8 cm²/V·s was achieved in the Si NC film after B doping, which is due to the reduction of grain boundary (GB) scattering in the B-doped samples. With increasing the doping concentration, it was interesting to find that a metal-insulator transition (MIT) took place in the B-doped Si NC films with high doping concentrations. The different carrier transport properties in the B-doped Si NC films with various doping concentrations were investigated and further discussed with emphasis on the scattering mechanisms in the transport process.

中文翻译：

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不同掺杂浓度的B掺杂Si纳米晶薄膜的载流子传输性质

通过等离子体增强化学气相沉积（PECVD）技术制备具有各种掺杂浓度的B掺杂氢化非晶硅（a- Si：H）膜。热退火后，在薄膜中获得了沉积后的样品，即B掺杂的硅纳米晶体（Si NCs）。研究了不同掺杂浓度的B掺杂Si NC薄膜的电子性能，并结合微观结构表征。霍尔迁移率的显着提高，上升到最大17.8 cm ²/ V·s在B掺杂后在Si NC膜中达到，这是由于B掺杂样品中晶界（GB）散射的减少所致。随着掺杂浓度的增加，有趣的是发现在高掺杂浓度的B掺杂Si NC薄膜中发生了金属-绝缘体转变（MIT）。研究了不同掺杂浓度的B掺杂Si NC薄膜中不同的载流子传输性质，并重点讨论了传输过程中的散射机理。