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Synthesis of Interface-Driven Tunable Bandgap Metal Oxides
ACS Materials Letters ( IF 11.4 ) Pub Date : 2020-08-17 , DOI: 10.1021/acsmaterialslett.0c00251
Boyce S. Chang 1 , Andrew Martin 1 , Brijith Thomas 2, 3 , Ang Li 4 , Rick W. Dorn 2, 3 , Jinlong Gong 4 , Aaron J. Rossini 2, 3 , Martin M. Thuo 1, 5, 6
Affiliation  

Mixed bandgap and bandgap tunability in semiconductors is critical in expanding their use. Composition alterations through single-crystal epitaxial growth and the formation of multilayer tandem structures are often employed to achieve mixed bandgaps, albeit with limited tunability. Herein, self-assembled one-dimensional coordination polymers provide facile synthons and templates for graphitic C-doped mesoporous oxides, gC-β-Ga2O3 or gC-In2O3 via controlled oxidative ligand ablation. These materials have mixed bandgaps and colors, depending on amount of gC present. The carbon/oxide interface leads to induced gap states, hence, a stoichiometrically tunable band structure. Structurally, a multiscale porous network percolating throughout the material is realized. The nature of the heat treatment and the top-down process allows for facile tunability and the formation of mixed bandgap metal oxides through controlled carbon deposition. As a proof of concept, gC-β-Ga2O3 was utilized as a photocatalyst for CO2 reduction, which demonstrated excellent conversion rates into CH4 and CO.

中文翻译:

界面驱动可调谐带隙金属氧化物的合成

半导体中带隙和带隙的混合可调谐性对于扩大其用途至关重要。尽管可调性有限,但通常采用通过单晶外延生长和多层串联结构形成的成分改变来实现混合带隙。在本文中,自组装的一维配位聚合物提供容易的合成子和模板石墨掺杂的C-中孔氧化物,GC-的β-Ga 2 ö 3或GC-在2 ö 3通过控制氧化配体烧蚀。这些材料具有混合的带隙和颜色,具体取决于存在的gC量。碳/氧化物界面导致感应的间隙状态,因此形成化学计量可调谐的能带结构。在结构上,实现了遍及整个材料的多尺度多孔网络。热处理的性质和自顶向下的过程允许通过控制的碳沉积来实现容易的可调性和混合带隙金属氧化物的形成。作为概念验证,GC-的β-Ga 2 ö 3被用作用于CO光催化剂2的减少,这表明优异的转化率为CH 4和CO。
更新日期:2020-09-08
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