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2D Materials for Universal Thermal Imaging of Micro- and Nanodevices: An Application to Gallium Oxide Electronics
ACS Applied Electronic Materials ( IF 4.7 ) Pub Date : 2020-08-17 , DOI: 10.1021/acsaelm.0c00574
James Spencer Lundh 1 , Tianyi Zhang 2 , Yuewei Zhang 3 , Zhanbo Xia 3 , Maxwell Wetherington 2 , Yu Lei 4 , Ethan Kahn 2 , Siddharth Rajan 3 , Mauricio Terrones 4 , Sukwon Choi 1
Affiliation  

We highlight the flexibility of two-dimensional (2D) materials for advancing current technologies through the introduction of 2D Raman thermography (2DRT). 2DRT combines monolayer materials and Raman spectroscopy to perform thermal imaging of micro- and nanodevices. In contrast to peak shift and line width based methods for Raman thermal analysis, 2DRT uses the anti-Stokes/Stokes intensity ratio which is only sensitive to temperature. To demonstrate the technique, monolayer molybdenum disulfide (MoS2) was transferred to the surface of devices based on β-gallium oxide (Ga2O3), an emerging ultrawide-bandgap semiconductor for high-frequency and high-power applications. The validation of the technique was performed on an (AlGa)2O3/Ga2O3 modulation-doped field effect transistor by using nanoparticle-assisted Raman thermometry. The peak operating temperature, a critical device performance metric, is underestimated by ∼30% by using standard Raman thermometry when compared to 2DRT. Finally, the 2D thermal imaging capabilities of 2DRT were demonstrated on an (AlGa)2O3/Ga2O3 transmission line measurement structure.

中文翻译:

微型和纳米设备通用热成像的2D材料:氧化镓电子的应用

通过引入2D拉曼热成像(2DRT),我们强调了二维(2D)材料在推进当前技术方面的灵活性。2DRT结合了单层材料和拉曼光谱,对微型和纳米设备进行热成像。与基于峰位移和线宽的拉曼热分析方法相比,2DRT使用的反斯托克斯/斯托克斯强度比仅对温度敏感。为了演示该技术,将单层二硫化钼(MoS 2)转移到了基于β-氧化镓(Ga 2 O 3)的器件表面,该器件是一种新兴的用于高频率和高功率应用的超宽带隙半导体。该技术的验证是在(AlGa)2 O上进行的纳米粒子辅助拉曼测温法对3 / Ga 2 O 3调制掺杂的场效应晶体管进行了研究。与2DRT相比,使用标准拉曼测温法可将峰值工作温度(一种关键的设备性能指标)低估约30%。最后,在(AlGa)2 O 3 / Ga 2 O 3传输线测量结构上证明了2DRT的2D热成像能力。
更新日期:2020-09-22
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