Abstract NbBiCh3 (Ch = S, Se) misfit-layered superconducting single crystals were successfully grown using a CsCl/KCl flux for the first time. The obtained crystals had a well-developed habit parallel to the c-plane with a typical width of 1–2 mm and thickness of 10–40 μm. The superconducting transition temperatures with zero resistivity of NbBiS3 single crystals obtained from the nominal composition of Nb0.9Bi1.2S3 was 0.31 K, and that value of the NbBiSe3 single crystals grown from the stoichiometry composition (NbBiSe3) was 2.3 K. Sharp decreases in electric resistivity and magnetic susceptibility at approximately 3 K suggested a possible superconducting transition temperature of NbBiSe3. The normal-state anisotropy values of grown NbBiS3 and NbBiSe3 single crystals were 2.2–2.4 and 1.5–1.6, respectively.

中文翻译：

---

NbBiCh3 (Ch = S, Se) 错配层状超导单晶的生长和各向异性评估

摘要 首次使用 CsCl/KCl 助熔剂成功生长了 NbBiCh3 (Ch = S, Se) 错配层状超导单晶。获得的晶体具有与 c 平面平行的发育良好的习性，典型宽度为 1-2 mm，厚度为 10-40 μm。从 Nb0.9Bi1.2S3 标称成分获得的 NbBiS3 单晶的零电阻超导转变温度为 0.31 K，而从化学计量成分 (NbBiSe3) 生长的 NbBiSe3 单晶的值为 2.3 K。电学急剧下降大约 3 K 的电阻率和磁化率表明 NbBiSe3 可能存在超导转变温度。生长的 NbBiS3 和 NbBiSe3 单晶的常态各向异性值分别为 2.2-2.4 和 1.5-1.6。