Abstract High-voltage (HV) integrated power devices are widely used in many applications, including alternating current/direct current (AC/DC) power converter, HV gate driver integrated circuit (IC) and light emitting diode (LED) driver IC, etc. Among these applications, AC/DC power converter is essential for almost all power systems operated in the DC conditions. As a power switch in the AC/DC converter, the fundamental performance requirement of these power devices is to withstand a high voltage of 500–900 V and simultaneously have a low power loss for its efficient conversion. Therefore, several device technologies have been proposed to realize a high breakdown voltage (BV) and a low specific on-resistance (Ron,sp), such as reduced surface field (RESURF) technology, lateral super-junction (SJ) structure, lateral insulated-gate bipolar transistor (LIGBT), integrated vertical structure and junction termination technology. In this paper, a comprehensive review of the development and prospect of these technologies in AC/DC switching application is presented. Furthermore, analytic Ron,sp-BV models for some typical device structures, the possible strategies of Bipolar - Complementary metal oxide semiconductor - Double-diffused metal oxide semiconductor (BCD) platform integrated with vertical SJ devices, partial silicon-on-insulator (SOI) BCD technology, low gate charge (Qg) HV integrated power devices and wide bandgap technology are also described.

中文翻译：

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交直流切换应用高压集成功率器件综述

摘要 高压（HV）集成功率器件广泛应用于许多应用领域，包括交流/直流（AC/DC）功率转换器、高压栅极驱动集成电路（IC）和发光二极管（LED）驱动IC等。 . 在这些应用中，AC/DC 电源转换器对于几乎所有在直流条件下运行的电力系统都是必不可少的。作为 AC/DC 转换器中的电源开关，这些功率器件的基本性能要求是承受 500-900 V 的高压，同时具有低功耗以实现高效转换。因此，人们提出了几种器件技术来实现高击穿电压 (BV) 和低比导通电阻 (Ron,sp)，例如减少表面场 (RESURF) 技术、横向超结 (SJ) 结构、横向绝缘栅双极晶体管 (LIGBT)，集成垂直结构和结端接技术。在本文中，对这些技术在交直流切换应用中的发展和前景进行了全面回顾。此外，一些典型器件结构的解析 Ron,sp-BV 模型，双极型 - 互补金属氧化物半导体 - 双扩散金属氧化物半导体 (BCD) 平台与垂直 SJ 器件集成的可能策略，部分绝缘体上硅 (SOI) ) BCD 技术、低栅极电荷 (Qg) HV 集成功率器件和宽带隙技术。全面回顾了这些技术在交直流切换应用中的发展和前景。此外，一些典型器件结构的解析 Ron,sp-BV 模型，双极型 - 互补金属氧化物半导体 - 双扩散金属氧化物半导体 (BCD) 平台与垂直 SJ 器件集成的可能策略，部分绝缘体上硅 (SOI) ) BCD 技术、低栅极电荷 (Qg) HV 集成功率器件和宽带隙技术。全面回顾了这些技术在交直流切换应用中的发展和前景。此外，一些典型器件结构的解析 Ron,sp-BV 模型，双极型 - 互补金属氧化物半导体 - 双扩散金属氧化物半导体 (BCD) 平台与垂直 SJ 器件集成的可能策略，部分绝缘体上硅 (SOI) ) BCD 技术、低栅极电荷 (Qg) HV 集成功率器件和宽带隙技术。