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Controlled growth of atomically thin transition metal dichalcogenides via chemical vapor deposition method
Materials Today Advances ( IF 10 ) Pub Date : 2020-08-17 , DOI: 10.1016/j.mtadv.2020.100098
J. Wang , T. Li , Q. Wang , W. Wang , R. Shi , N. Wang , A. Amini , C. Cheng

Two-dimensional (2D) transition metal dichalcogenides (TMDC) have attracted great research interest due to their potential application in electronics, optoelectronics, electrocatalysis, and so on. To satisfy expectations, high-quality materials with designed structures are highly desired through the controlled growth of TMDC. Chemical vapor deposition (CVD) offers facile control in synthesizing 2D TMDC as well as a high degree of freedom for tuning their structures and properties. In this review, we elaborate on recent advances in CVD techniques for synthesizing atomically thin TMDC. The novel techniques for achieving continuous uniform 2D films are provided along with insights into the growth mechanisms. Moreover, approaches toward high-quality materials by growing large single crystals and oriented domains are thoroughly summarized. The strategies for controlling the crystal thickness, phase, and doping condition are also discussed. Finally, we address the challenges in the field and prospective research directions.



中文翻译:

通过化学气相沉积法控制原子薄过渡金属二卤化物的生长

二维(2D)过渡金属二硫化碳(TMDC)由于其在电子,光电,电催化等领域的潜在应用而吸引了巨大的研究兴趣。为了满足期望,通过TMDC的受控增长,人们迫切需要具有设计结构的高质量材料。化学气相沉积(CVD)在合成2D TMDC时提供了便捷的控制,并且在调节其结构和特性方面具有高度的自由度。在这篇综述中,我们详细介绍了用于合成原子薄TMDC的CVD技术的最新进展。提供了用于获得连续均匀2D胶片的新颖技术以及对生长机理的见解。此外,还全面总结了通过生长大的单晶和取向畴来获得高质量材料的方法。还讨论了控制晶体厚度,相位和掺杂条件的策略。最后,我们解决了该领域的挑战和前瞻性研究方向。

更新日期:2020-08-17
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