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Temperature-dependent photoluminescence of CdSe/CdTe quasi-type-II quantum dots
Journal of Luminescence ( IF 3.6 ) Pub Date : 2020-12-01 , DOI: 10.1016/j.jlumin.2020.117551
Musa Çadırcı

Abstract Temperature-dependant photoluminescence (PL) properties of CdSe/CdTe quasi-Type-II QDs are studied using steady-state PL spectroscopy. It is observed that the PL intensity decreased as the temperature increased due to non-radiative thermal escapes and surface trap relaxations. The inverse relationship between PL peak energy and the temperature is ascribed to the exciton-phonon coupling and lattice deformation potential. The existence of surface trap relaxation and exciton-phonon coupling are further confirmed with the direct relationship between PL linewidth and temperature up to a certain point. A second peak, which has temperature-dependant properties, is observed at higher energies and it is attributed to the formation of CdTe core during shell growth process.

中文翻译:

CdSe/CdTe 准 II 型量子点的温度相关光致发光

摘要 使用稳态 PL 光谱研究了 CdSe/CdTe 准 II 型 QD 的温度相关光致发光 (PL) 特性。据观察,由于非辐射热逃逸和表面陷阱弛豫,PL 强度随着温度的升高而降低。PL 峰值能量与温度之间的反比关系归因于激子-声子耦合和晶格变形势。表面陷阱弛豫和激子-声子耦合的存在进一步证实了 PL 线宽和温度之间的直接关系直到某一点。在较高能量下观察到具有温度相关特性的第二个峰,这归因于壳生长过程中 CdTe 核的形成。
更新日期:2020-12-01
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