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InGaN/GaN multi‐quantum‐well solar cells under high solar concentration and elevated temperatures for hybrid solar thermal‐photovoltaic power plants
Progress in Photovoltaics ( IF 6.7 ) Pub Date : 2020-08-16 , DOI: 10.1002/pip.3326
Gilad Moses 1, 2 , Xuanqi Huang 3 , Yuji Zhao 3 , Matthias Auf der Maur 4 , Eugene A. Katz 1, 5 , Jeffrey M. Gordon 1
Affiliation  

Hybrid solar electricity generation combines the high efficiency of photovoltaics (PVs) with the dispatchability of solar thermal power plants. Recent thermodynamic analyses have shown that the most efficient strategy constitutes an integrated concentrating PV‐thermal absorber operating at high solar concentration and at the high temperatures suitable to efficient commercial steam turbines (~673–873 K). The recuperation of PV thermalization losses and the exploitation of sub‐bandgap photons can more than compensate for the inherent decrease of PV efficiency with temperature in properly tailored tandem solar cells for which promising candidates are III–N alloys. Recently, there have been considerable efforts to develop apposite InGaN solar cells by producing InGaN/GaN multiple quantum wells (MQWs) as the top cell in a tandem PV device that would absorb the short‐wavelength regime of the solar spectrum, while sub‐bandgap photons and PV thermalization are absorbed in the thermal receiver.

中文翻译:

高太阳能浓度和高温下的InGaN / GaN多量子阱太阳能电池,用于太阳能光伏热电站

混合太阳能发电结合了光伏(PV)的高效率和太阳能热电厂的可调度性。最近的热力学分析表明,最有效的策略是在高太阳能集中度和高温下运行的集成式集中式PV热吸收器,适用于高效商用蒸汽轮机(〜673–873 K)。光伏热损耗的恢复和亚带隙光子的利用,可以弥补因温度适当调整的串联太阳能电池中PV效率因温度的固有下降而带来的补偿,而前者是III–N合金。最近,
更新日期:2020-10-05
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