Abstract In this study, preliminary investigation of different post-deposition treatments using materials such as cadmium chloride (CdCl2), magnesium chloride (MgCl2), copper chloride (CuCl2), and silver nitrate (AgNO3) has been reported for close-spaced sublimation (CSS) grown cadmium telluride (CdTe) thin films. The treatment of CdTe thin films was conducted in open air at 390 °C. Treated CdTe thin films were then exposed to different characterization tools to explore the effects of treatment on the structural and optoelectronic properties of CdTe films. Hall effect measurement was executed for electrical properties measurement as well as X-ray diffraction (XRD) analysis was utilized for the detection of structural parameters. The energy band gap was obtained at approximately 1.47 eV for all the treated films. CuCl2 treated CdTe films exhibited a higher carrier concentration of 1015 cm−3 than other treatments. The impact of Cu diffusion during CuCl2 treatment was suggested as an effect of doping during recrystallization. The average grain sizes changed moderately in the range 4–7 μm for different post-deposition treatments. The optimized results can provide an indication for other materials to be used as the alternative post-deposition treatment to conventional CdCl2.

中文翻译：

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用于太阳能电池应用的 CdTe 薄膜的替代沉积后处理方法

摘要 在这项研究中，已经报道了使用氯化镉 (CdCl2)、氯化镁 (MgCl2)、氯化铜 (CuCl2) 和硝酸银 (AgNO3) 等材料进行近距离升华的不同沉积后处理的初步研究。 CSS) 生长的碲化镉 (CdTe) 薄膜。CdTe薄膜的处理在390°C的露天环境中进行。然后将处理过的 CdTe 薄膜暴露于不同的表征工具，以探索处理对 CdTe 薄膜的结构和光电特性的影响。霍尔效应测量用于电气特性测量，X 射线衍射 (XRD) 分析用于检测结构参数。所有处理过的薄膜的能带隙约为 1.47 eV。CuCl2 处理的 CdTe 薄膜表现出比其他处理更高的载流子浓度 1015 cm-3。CuCl2 处理过程中铜扩散的影响被认为是再结晶过程中掺杂的影响。对于不同的后沉积处理，平均晶粒尺寸在 4-7 μm 范围内适度变化。优化的结果可以为其他材料用作传统 CdCl2 的替代后沉积处理提供指示。