Nb-doped SrSnO₃ (SSNO) thin films were epitaxially grown on LaAlO₃(001) single-crystal substrates using pulsed laser deposition under various oxygen pressures and substrate temperatures. The crystalline structure, electrical, and optical properties of the films were investigated in detail. X-ray diffraction results show that the cell volume of the films reduces gradually with increasing oxygen pressure while preserving the epitaxial characteristic. X-ray photoelectron spectroscopy analysis confirms the Nb⁵⁺ oxidation state in the SSNO films. Hall-effect measurements were performed and the film prepared at 0.2 Pa with the 780 °C substrate temperature exhibits the lowest room-temperature resistivity of 31.3 mΩcm and Hall mobility of 3.31 cm²/Vs with a carrier concentration at 6.03 × 10¹⁹/cm³. Temperature-dependent resistivity of this sample displays metal-semiconductor transition and is explained mainly by electron-electron effects. Optical transparency of the films is more than 70% in the wavelength range from 600 to 1800 nm. The band gaps increase from 4.35 to 4.90 eV for the indirect gap and 4.82 to 5.29 eV for the direct by lowering oxygen pressure from 20 to 1 × 10⁻³ Pa, which can be interpreted by Burstein-Moss effect and oxygen vacancies generated in the high vacuum.

在不同的氧气压力和衬底温度下，使用脉冲激光沉积在LaAlO ₃（001）单晶衬底上外延生长掺Nb的SrSnO ₃（SSNO）薄膜。详细研究了薄膜的晶体结构，电学和光学性能。X射线衍射结果表明，随着氧气压力的增加，薄膜的晶胞体积逐渐减小，同时保持了外延特性。X射线光电子能谱分析证实了SSNO膜中Nb ^5+的氧化态。进行霍尔效应测量，以780°C的基板温度在0.2 Pa下制备的薄膜表现出最低的室温电阻率31.3mΩcm和霍尔迁移率3.31 cm ²/ Vs，载流子浓度为6.03×10 ¹⁹ / cm ³。该样品的随温度变化的电阻率显示出金属-半导体的转变，并且主要由电子-电子效应来解释。膜的光学透明度在600至1800 nm的波长范围内超过70％。通过将氧气压力从20  Pa降低到1×10 ^-3 Pa，能带隙从间接能隙从4.35增至4.90 eV，直接能带隙从4.82增至5.29 eV ，这可以通过Burstein-Moss效应和氧的空位来解释高真空。