Charge-trapping memory devices based on two-dimensional (2D) material heterostructures possess an atomically thin structure and excellent charge transport capability, making them promising candidates for next-generation flash memories to achieve miniaturized size, high storage capacity, fast switch speed, and low power consumption. Here, we report a nonvolatile floating-gate memory device based on an ReS₂/boron nitride/graphene heterostructure. The implemented ReS₂ memory device displays a large memory window exceeding 100 V, leading to an ultrahigh current ratio over 10⁸ between programming and erasing states. The ReS₂ memory device also exhibits an ultrafast switch speed of 1 μs. In addition, the device can endure hundreds of switching cycles and shows stable retention characteristics with ∼40% charge remaining after 10 years. More importantly, taking advantage of its anisotropic electrical properties, a single ReS₂ flake can achieve direction-sensitive multi-level data storage to enhance the data storage density. On the basis of these characteristics, the proposed ReS₂ memory device is potentially able to serve the entire memory device hierarchy, meeting the need for scalability, capacity, speed, retention, and endurance at each level.

中文翻译：

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基于堆叠的各向异性ReS2-氮化硼-石墨烯异质结构的多层闪存器件。

基于二维（2D）材料异质结构的电荷陷阱存储器件具有原子薄的结构和出色的电荷传输能力，使其成为下一代闪存的理想选择，以实现小型化，高存储容量，快速切换速度和低功耗。在这里，我们报告基于ReS ₂ /氮化硼/石墨烯异质结构的非易失性浮栅存储器件。所实现的ReS ₂存储设备显示一个超过100 V的大存储窗口，从而导致编程状态和擦除状态之间的电流比超过10 ⁸。ReS ₂存储设备还具有1μs的超快开关速度。此外，该器件可承受数百个开关周期，并显示出稳定的保持特性，并在10年后剩余约40％的电荷。更重要的是，利用其各向异性的电学特性，单个ReS ₂薄片可以实现方向敏感的多层数据存储，从而提高数据存储密度。基于这些特性，建议的ReS ₂存储设备可能能够服务于整个存储设备层次结构，从而满足每个级别对可伸缩性，容量，速度，保留和耐用性的需求。