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The impurity size-effect and phonon deformation potentials in wurtzite GaN
Semiconductor Science and Technology ( IF 1.9 ) Pub Date : 2020-08-13 , DOI: 10.1088/1361-6641/ab9fab
Elias Kluth , Matthias Wieneke , Jürgen Bläsing , Hartmut Witte , Karsten Lange , Armin Dadgar , Rüdiger Goldhahn , Martin Feneberg

Doping induced changes in lattice parameters are investigated experimentally for the shallow donors silicon and germanium in thin-film wurtzite a-plane GaN. Silicon doping results in a lattice contraction while germanium doping results in a small but measurable lattice expansion. By high-resolution x-ray diffraction, we are able to determine the isotropically averaged size-effect with high accuracy. The analysis procedure yields en passant results for the phonon deformation potentials ##IMG## [http://ej.iop.org/images/0268-1242/35/9/095033/sstab9fabieqn1.gif] {$c_\mathrm{E_1(TO)}$} and ##IMG## [http://ej.iop.org/images/0268-1242/35/9/095033/sstab9fabieqn2.gif] {$c_\mathrm{E_2^h}$} .

中文翻译:

纤锌矿型GaN中的杂质尺寸效应和声子变形势

实验研究了薄膜纤锌矿a面GaN中浅施主硅和锗的掺杂引起的晶格参数变化。硅掺杂导致晶格收缩,而锗掺杂导致较小但可测量的晶格扩展。通过高分辨率的X射线衍射,我们能够以高精度确定各向同性平均尺寸效应。该分析过程可得出声子变形势的全部结果## IMG ## [http://ej.iop.org/images/0268-1242/35/9/095033/sstab9fabieqn1.gif] {$ c_ \ mathrm { E_1(TO)} $}和## IMG ## [http://ej.iop.org/images/0268-1242/35/9/095033/sstab9fabieqn2.gif] {$ c_ \ mathrm {E_2 ^ h} $}。
更新日期:2020-08-14
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