ABSTRACT In this work, various reciprocating cycle times of 80, 160, 240, and 320 sec in the diamond wire sawing (DWS) process were adjusted to improve the slicing ability in solar industry. During the same slicing time, the long reciprocating cycle time had less velocity inverse points in comparison with the short reciprocating cycle time. Consequently, the total friction force of the slicing wires used in the DWS process with the short reciprocating cycle time was larger than that of the slicing wires used in the DWS process with the long reciprocating cycle time. It was noting that the lower diamond consumption and better slicing ability in the DWS process with a reciprocating cycle time of 320 sec was obtained in comparison with a reciprocating cycle time of 80 sec. However, since the diamond grits with too high slicing strength to collide the Si material, the serious damages were form on the wafer edge. Therefore, the edge chipping increased to 1.63% as the reciprocating cycle time of 320 sec. The highest mass production yield of 94.22% and the lowest edge chipping of 1.23% for the DWS-sliced mc-Si wafers were obtained as the suitable reciprocating cycle time was 240 sec.

中文翻译：

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开发多晶硅片切割能力强的金刚石线锯技术

摘要在这项工作中，调整了金刚石线锯 (DWS) 过程中 80、160、240 和 320 秒的各种往复循环时间，以提高太阳能行业的切片能力。在相同的切片时间内，与短的往复循环时间相比，长的往复循环时间具有较少的速度反转点。因此，在短往复循环时间的 DWS 工艺中使用的切片丝的总摩擦力大于在往复循环时间长的 DWS 工艺中使用的切片丝的总摩擦力。值得注意的是，与 80 秒的往复循环时间相比，在 320 秒的往复循环时间的 DWS 工艺中获得了更低的金刚石消耗和更好的切片能力。然而，由于切割强度过高的金刚石磨粒与Si材料碰撞，在晶片边缘形成严重损坏。因此，当往复循环时间为 320 秒时，边缘碎裂增加到 1.63%。由于合适的往复循环时间为 240 秒，DWS 切片的 mc-Si 晶片获得了最高的 94.22% 的批量生产良率和 1.23% 的最低边缘碎裂。