ABSTRACT

Metal Assisted Chemical Etching (MACE) is applied for generation of SiNWs (SiNWs). For the first time, the curved SiNWs are directly generated using MACE approach without any surface post-treatment after formation of SiNWs. This leaves the surface of the SiNWs intact without changing the surface composition. For comparison, straight SiNWs are generated under the same etchant and catalyst conditions. The generated curved nanostructures show a much higher Photo Luminescence (PL) compared to the straight SiNWs. The PLs in both cases of straight and curved nanowires are believed to be due to quantum confinement effects on the surface of the SiNWs. Blue shift of PL spectrum alongside its much higher intensity for the curved, is believed to be due to surface effects and possible coupling of the Plasmons with the silicon’s quantum confined bands, highly enhancing light extraction out of SiNWs.

摘要

金属辅助化学蚀刻 (MACE) 用于生成 SiNW (SiNW)。首次使用 MACE 方法直接生成弯曲的 SiNW，在 SiNW 形成后无需任何表面后处理。这使 SiNW 的表面保持完整，而不会改变表面成分。为了比较，在相同的蚀刻剂和催化剂条件下产生了直的 SiNW。与直的 SiNW 相比，生成的弯曲纳米结构显示出更高的光致发光 (PL)。直的和弯曲的纳米线两种情况下的 PL 都被认为是由于 SiNW 表面上的量子限制效应。PL光谱的蓝移以及弯曲的更高强度被认为是由于表面效应以及等离子体与硅的量子限制带的可能耦合，