We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz–108 GHz band and achieved excellent spurious suppression. A low‐noise amplifier (LNA) with a four‐stage single‐ended architecture using a common‐source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W‐band image‐rejection mixer (IRM) with an external off‐chip coupler was also designed. The IRM provided a conversion gain of 13 dB–17 dB for RF frequencies of 80 GHz–110 GHz and image‐rejection ratios of 17 dB–19 dB for RF frequencies of 93 GHz–100 GHz.

中文翻译：

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采用0.1μmmHEMT技术的W波段MMIC芯片组

我们开发了一种0.1μm的变质高电子迁移率晶体管，并使用我们的内部技术制造了W带单片微波集成电路芯片组，以验证所开发技术的性能和可用性。直流特性是漏极电流密度为747 mA / mm，最大跨导为1.354 S / mm。RF特性是截止频率为210 GHz，最大振荡频率为252 GHz。开发了倍频器以增加输入信号的频率。制成的乘法器在94 GHz至108 GHz频带中显示出高输出值（大于0 dBm），并实现了出色的杂散抑制。还开发了一种采用共源级的具有四级单端架构的低噪声放大器（LNA）。该LNA在83 GHz至110 GHz之间的频带中实现了20 dB的增益，在94 GHz频率下的噪声系数低于3.8 dB。还设计了带有外部片外耦合器的AW带图像抑制混频器（IRM）。对于80 GHz–110 GHz的RF频率，IRM提供了13 dB–17 dB的转换增益，对于93 GHz–100 GHz的RF频率，IRM提供了17 dB–19 dB的镜像抑制比。