Lead‐free dielectrics with both excellent strain behavior and superior energy‐storage feature are crucial toward providing desired performance for smart electrical devices, especially under harsh environmental conditions. Herein, it is demonstrated that giant strain response of ≈0.51% with small hysteresis of ≈29% and large recoverable energy density (≈1.6 J cm⁻³) under low electric field (120 kV cm⁻¹), together with excellent stabilities against temperature, frequency, and cycling, can be simultaneously achieved in oriented (with 79.4% 〈00l〉 texture) (Bi_0.5Na_0.5)TiO₃–BaTiO₃–NaNbO₃ (BNT–BT–NN) ceramics through integrating crystallographic texturing and domain engineering. Besides, a fast discharge rate of <0.1 µs along with good thermal endurance in a wide temperature range can also be acquired. It is uncovered by piezoelectric force microscopy measurements that the formation of oriented microstructure greatly promotes the domain switching and mobility, producing the considerably easy ergodic relaxor to ferroelectric phase transition with concurrently improved strain and energy storage properties in grain orientation controlled BNT–BT–NN ceramics. This study offers a feasible and propagable guidance, i.e., crystallographic texturing and domain engineering, to develop new lead‐free dielectrics for both actuators and capacitors.

中文翻译：

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（Bi0.5Na0.5）TiO3基晶粒取向控制陶瓷在低电场下具有低磁滞和增强的储能性能的巨场感应应变

具有出色的应变性能和出色的储能特性的无铅电介质对于为智能电气设备提供理想的性能至关重要，特别是在恶劣的环境条件下。本文证明，在低电场（120 kV cm ^-1）下，巨大的应变响应≈0.51％，磁滞小≈29％，可恢复的能量密度大（≈1.6J cm ^-3），并且具有出色的抗稳定性取向（具有79.4％的<00l>织构）（Bi _0.5 Na _0.5）TiO ₃ –BaTiO ₃ –NaNbO ₃可以同时实现温度，频率和循环（BNT–BT–NN）陶瓷通过整合晶体学纹理化和领域工程设计。此外，还可以获得<0.1 µs的快速放电速率以及在宽温度范围内的良好耐热性。压电力显微镜测量发现，定向微结构的形成极大地促进了畴的转换和迁移，从而产生了相当容易的遍历缓和的铁电相变，同时改善了晶粒取向控制的BNT-BT-NN陶瓷的应变和能量存储性能。这项研究提供了可行且可推广的指南，即晶体学织构和领域工程，以开发用于致动器和电容器的新型无铅电介质。