The development of high-speed, nonvolatile memory devices with low power consumption remains a significant challenge for next-generation computing. A recent study reported molecular switches operating at low voltages in large-area junctions by coupling supramolecular structural changes and counterion migration to bias-dependent redox, culminating in proof-of-concept memory comprising self-assembled monolayers.

中文翻译：

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大面积分子交界处：合成用于下一代非易失性存储器的集成电路

具有低功耗的高速非易失性存储设备的开发仍然是下一代计算的重大挑战。最近的一项研究报道了通过将超分子结构变化和抗衡离子迁移耦合到偏倚依赖的氧化还原，在大面积连接处以低电压工作的分子开关，最终形成了包括自组装单分子层的概念验证存储器。