Abstract The present research aimed to investigate tin selenide (SnSe) films and study effects of indium (In) dopant on their physical properties. The X-ray diffraction (XRD) pattern results confirmed the formation of polycrystalline nature of orthorhombic SnSe. Also, addition of In dopant reduced the size of crystallite and increased the amount of strain in the crystalline lattice. Field emission scanning electron microscopy (FESEM) images showed nanostructures in the form of spherical shapes in nano-dimensions on surface of film. Optical studies also indicated the band gap energy in an appropriate range (1.50–1.62 eV) for absorbing sunlight rays. The electrical characteristics indicated an improvement in the electrical conductivity of doped samples compared to the un-doped sample, so that the solar cell efficiency was obtained at 0.36% for the sample with the highest dopant concentrations. The role of In ion was investigated on the photovoltaic properties of samples by examining physical properties.

中文翻译：

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In 掺杂的 SnSe 纳米粒子的电沉积：物理特性与太阳能电池性能的相关性

摘要 本研究旨在研究硒化锡 (SnSe) 薄膜并研究铟 (In) 掺杂剂对其物理性能的影响。X 射线衍射 (XRD) 图案结果证实了正交 SnSe 的多晶性质的形成。此外，In 掺杂剂的添加减小了微晶的尺寸并增加了晶格中的应变量。场发射扫描电子显微镜 (FESEM) 图像显示薄膜表面纳米尺寸的球形纳米结构。光学研究还表明带隙能量在适当范围 (1.50–1.62 eV) 内以吸收阳光。电学特性表明掺杂样品的电导率比未掺杂的样品有所改善，因此太阳能电池效率在 0. 具有最高掺杂浓度的样品为 36%。通过检查物理特性，研究了 In 离子对样品光伏特性的作用。