In this paper, the hybrid β-Ga₂O₃ Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K. The barrier height ϕ_b increases, and the ideality factor n decreases as the temperature increases, indicating the presence of barrier height inhomogeneity between the polymer and β-Ga₂O₃ interface. The mean barrier height and the standard deviation are 1.57 eV and 0.212 eV, respectively, after taking the Gaussian barrier height distribution model into account. Moreover, a relatively fast response speed of less than 320 ms, high reponsivity of 0.6 A/W, and rejection ratio of R_{254 nm}/R_{400 nm} up to 1.26 × 10³ are obtained, suggesting that the hybrid PEDOT:PSS/β-Ga₂O₃ Schottky barrier diodes can be used as deep ultraviolet (DUV) optical switches or photodetectors.

在本文中，混合的β-Ga ₂ ö ₃肖特基二极管被制造有PEDOT：PSS作为阳极。当从298K的温度变化至423 K.的势垒高度的电气特性进行了研究φ _b的增大，和理想因子Ñ随着温度的升高而降低，表明势垒高度的不均匀性的聚合物和的β-Ga之间存在₂ ö _3个界面。考虑高斯势垒高度分布模型后，平均势垒高度和标准偏差分别为1.57 eV和0.212 eV。此外，响应速度低于320毫秒，响应速度很快，0.6 A / W的响应速度很快，抑制比为[R _254纳米/ [R _400纳米到1.26×10 ³获得，这表明所述混合PEDOT：PSS /的β-Ga _2个ö ₃肖特基势垒二极管可以被用作深紫外线（DUV）光开关或光检测器。