Thin films of p-terphenyl luminophors doped by varying amounts of anthracene were prepared by using spin coating technique. The morphological, structural, and photophysical investigation of thin films of p-terphenyl as a function of anthracene concentration is studied by using scanning electron microscopy (SEM), X-ray diffraction (XRD), fluorescence spectroscopy and fluorescence microscopy. The results of XRD and SEM studies indicated that the doped p-terphenyl thin film is homogeneous as compared with a bare p-terphenyl thin film. The fluorescence spectroscopy results indicate complete quenching of p-terphenyl fluorescence and simultaneous sensitization of blue anthracene like emission towards the red side of the spectrum with maximum intensity at 410 nm. The blue intense emission of anthracene seen in fluorescence microscopy images is in agreement with observed fluorescence spectral results. A suitable mechanism of excitation energy transfer (EET) from p-terphenyl to anthracene molecules is proposed and discussed on the basis of energy level diagram. The efficient EET is believed to occur by the orientation of phenyl rings of p-terphenyl in excited state. As the concentration of doped anthracene increases, the fluorescence intensity of doped p-terphenyl and Full Width at Half Maximum (FWHM) found to be increased. The p-terphenyl film containing 0.65 moles of anthracene is of FWHM as low as 28.51 nm. Such narrow band blue emitting doped luminophors are of demand in light emitting diodes (OLED) and scintillation applications.

中文翻译：

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旋涂法制备蒽掺杂对三联苯薄膜及其表征；荧光特性的研究。

采用旋涂技术制备了掺杂不同量蒽的对三联苯发光体薄膜。通过使用扫描电子显微镜 (SEM)、X 射线衍射 (XRD)、荧光光谱和荧光显微镜，对作为蒽浓度函数的对三联苯薄膜的形态、结构和光物理研究进行了研究。XRD 和 SEM 研究的结果表明，与裸露的对三联苯薄膜相比，掺杂的对三联苯薄膜是均匀的。荧光光谱结果表明对三联苯荧光完全猝灭，同时对光谱红色侧的蓝色蒽类发射敏感，在 410 nm 处具有最大强度。在荧光显微镜图像中看到的蒽的蓝色强发射与观察到的荧光光谱结果一致。在能级图的基础上，提出并讨论了一种合适的从对三联苯到蒽分子的激发能转移（EET）机制。据信，有效的 EET 是通过对三联苯的苯环在激发态的取向而发生的。随着掺杂蒽浓度的增加，发现掺杂对三联苯的荧光强度和半峰全宽 (FWHM) 增加。含有0.65摩尔蒽的对三联苯薄膜的FWHM低至28.51 nm。这种窄带蓝色发光掺杂发光体在发光二极管 (OLED) 和闪烁应用中有需求。在能级图的基础上，提出并讨论了一种合适的从对三联苯到蒽分子的激发能转移（EET）机制。据信，有效的 EET 是通过对三联苯的苯环在激发态的取向而发生的。随着掺杂蒽浓度的增加，发现掺杂对三联苯的荧光强度和半峰全宽 (FWHM) 增加。含有0.65摩尔蒽的对三联苯薄膜的FWHM低至28.51 nm。这种窄带蓝色发光掺杂发光体在发光二极管 (OLED) 和闪烁应用中有需求。在能级图的基础上，提出并讨论了一种合适的从对三联苯到蒽分子的激发能转移（EET）机制。据信，有效的 EET 是通过对三联苯的苯环在激发态的取向而发生的。随着掺杂蒽浓度的增加，发现掺杂对三联苯的荧光强度和半峰全宽 (FWHM) 增加。含有0.65摩尔蒽的对三联苯薄膜的FWHM低至28.51 nm。这种窄带蓝色发光掺杂发光体在发光二极管 (OLED) 和闪烁应用中有需求。据信，有效的 EET 是通过对三联苯的苯环在激发态的取向而发生的。随着掺杂蒽浓度的增加，发现掺杂对三联苯的荧光强度和半峰全宽 (FWHM) 增加。含有0.65摩尔蒽的对三联苯薄膜的FWHM低至28.51 nm。这种窄带蓝色发光掺杂发光体在发光二极管 (OLED) 和闪烁应用中有需求。据信，有效的 EET 是通过对三联苯的苯环在激发态的取向而发生的。随着掺杂蒽浓度的增加，发现掺杂对三联苯的荧光强度和半峰全宽 (FWHM) 增加。含有0.65摩尔蒽的对三联苯薄膜的FWHM低至28.51 nm。这种窄带蓝色发光掺杂发光体在发光二极管 (OLED) 和闪烁应用中有需求。