Two circular Al 0.6 Ga 0.4 As p + -i-n + 2 µ m i layer spectroscopic x-ray avalanche photodiodes (one 200 µ m diameter and one 400 µ m diameter) were made from a structure produced by metalorganic vapour phase epitaxy. The capacitances and currents of the detectors as functions of applied bias were measured, and 55 Fe x-ray (Mn Kα = 5.9 keV; Mn Kβ = 6.49 keV) spectra were accumulated at 20 °C (293 K). Improved energy resolutions (measured as the full width at half maximum of the 5.9 keV peak) with increased applied reverse bias were observed with both detectors. In part, the improvement was attributed to avalanche multiplication. Energy resolutions of 630 eV ± 40 eV and 730 eV ± 50 eV were achieved with the 200 µ m detector at an applied reverse bias of 38 V and the 400 µ m detector at an applied reverse bias of 40 V, respectively. It is the first time Al 0.6 Ga 0.4 As has been demonst...

中文翻译：

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用于光谱的Al 0.6 Ga 0.4 As x射线雪崩光电二极管

由金属有机气相外延制备的结构制成两个圆形的Al 0.6 Ga 0.4 As p + -in + 2μmi层光谱X射线雪崩光电二极管（直径分别为200 µm和直径为400 µm）。测量了检测器的电容和电流作为施加偏压的函数，并且在20°C（293 K）时积累了55 Fe x射线（MnKα= 5.9 keV； MnKβ= 6.49 keV）光谱。在两个检测器上均观察到提高的能量分辨率（以5.9 keV峰值的一半的最大宽度测量）和施加的反向偏压增加。这种改善部分归因于雪崩倍增。使用200 µm的检测器在施加38 V的反向偏压时和400 µm的检测器在施加40 V的反向偏压时，分别获得630 eV±40 eV和730 eV±50 eV的能量分辨率。