Abstract Previously, much work on nonlinear optical effects in Morse quantum wells (MQWs) was based on electronic state transitions. However, exciton effect in MQWs is neglected and needs to be considered due to its great significance in determining nonlinear optical effects. Here, the variational method and the diagonalization method are utilized to acquire excitonic states in Al x Ga 1 − x As / GaAs MQWs. The exciton effect in MQWs induces an obvious enhancement of the linear and nonlinear optical absorption coefficients (OACs) and refractive index changes (RICs). The linear and nonlinear OACs and RICs are dynamically manipulated through tuning the electric field, and even are suppressed under a strong electric field. In addition, the linear and nonlinear OACs and RICs in MQWs are strongly affected by the hole mass, the width parameter and the aluminum concentration, which provides direction for obtaining desired nonlinear optical effects.

中文翻译：

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外电场对莫尔斯量子阱中线性和非线性光吸收系数和折射率变化的激子效应

摘要 以前，关于莫尔斯量子阱 (MQW) 中非线性光学效应的许多工作都是基于电子状态跃迁的。然而，MQW 中的激子效应被忽略并需要考虑，因为它在确定非线性光学效应方面具有重要意义。在此，变分法和对角化法用于获取 Al x Ga 1 - x As / GaAs MQW 中的激子态。MQW 中的激子效应导致线性和非线性光吸收系数 (OAC) 和折射率变化 (RIC) 的明显增强。线性和非线性 OAC 和 RIC 通过调整电场动态操纵，甚至在强电场下被抑制。此外，MQW 中的线性和非线性 OAC 和 RIC 受到孔质量的强烈影响，