In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favors the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surface accumulation layer yielding good ohmic contacts thus making it an interesting choice for chemical and biological sensing platforms. Template Assisted Selective Epitaxy (TASE) enables the integration of III-V highly scaled devices, monolithically integrated on Silicon, within a fully CMOS compatible fabrication scheme hence without any catalyst-induced growth. With a new geometry, high-aspect-ratio (HAR) InAs fins and a new application of pH sensing the versatility of TASE is exhibited. HAR InAs fins, fin height to fin width in excess of 4 for fin width down to 30 nm are fabricated on a Si substrate. The HAR InAs-on-insulator fins are characterized as pH sensors. A sensitivity of 38.8 mV per pH is extracted at $6~\mu \text{A}$ drain current from a 40 nm wide 20 multi-finger array.

中文翻译：

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用于 pH 传感的单片集成无催化剂高纵横比 InAs-On-Insulator (InAsOI) FinFET

在这项工作中，我们报告了一种新颖的绝缘体上砷化铟 (InAsOI) FinFET 平台，其设计具有创纪录的高纵横比，有利于将器件用作电荷传感器。InAs 在 III-V 半导体中具有非常高的迁移率，并且本征表面积累层产生良好的欧姆接触，因此使其成为化学和生物传感平台的有趣选择。模板辅助选择性外延 (TASE) 能够在完全兼容 CMOS 的制造方案中集成 III-V 族高度缩放的器件，单片集成在硅上，因此没有任何催化剂诱导的生长。凭借新的几何形状、高纵横比 (HAR) InAs 鳍片和 pH 传感的新应用，TASE 的多功能性得以展现。HAR InAs 鳍片，在 Si 衬底上制造超过 4 的鳍高度至鳍宽度，鳍宽度低至 30 nm。HAR InAs 绝缘体翅片的特点是作为 pH 传感器。从 40 nm 宽的 20 多指阵列以 $6~\mu\text{A}$ 漏极电流提取每个 pH 值 38.8 mV 的灵敏度。