This work studies the self-heating (SH) effect in ultra-thin body ultra-thin buried oxide (UTBB) FDSOI MOSFETs at cryogenic temperatures down to 77 K. S-parameter measurements in a wide frequency range, with the so-called RF technique, are employed to assess SH parameters and related variation of analog figures of merit (FoMs) at different temperatures. Contrary to the expectations, the effect of self-heating on analog FoMs is slightly weaker at cryogenic temperatures with respect to room-temperature case. The extracted thermal resistance and channel temperature rise at 300 K and 77 K in short-channel devices are of the same order of magnitude. The observed increase in SH characteristic frequency with temperature reduction emphasizes the advantage of the RF technique for the fair analysis of SH-related features in advanced technologies at cryogenic temperatures.

中文翻译：

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FDSOI UTBB MOSFET 在低温下的自热及其对模拟品质因数的影响

这项工作研究了超薄体超薄掩埋氧化物 (UTBB) FDSOI MOSFET 在低至 77 K 的低温下的自热 (SH) 效应。 在宽频率范围内测量 S 参数，使用所谓的 RF技术，用于评估不同温度下的 SH 参数和模拟品质因数 (FoM) 的相关变化。与预期相反，相对于室温情况，在低温下自加热对模拟 FoM 的影响略弱。短通道器件中 300 K 和 77 K 时的提取热阻和通道温升处于同一数量级。