This paper details a robust parameter extraction flow for the PSPHV LDMOS transistor model. The procedure uses a global scaling parameter set and accounts for self-heating. We describe how to determine parameters associated with important physical effects specific to PSPHV: non-uniform lateral channel doping; the Kirk effect; internal drain voltage clamping; and the drain expansion effect. The method is verified on devices from different technologies. Verilog-A code for PSPHV is publicly available.

中文翻译：

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PSHV LDMOS 晶体管模型的参数提取

本文详细介绍了 PSHV LDMOS 晶体管模型的稳健参数提取流程。该过程使用全局缩放参数集并考虑自热。我们描述了如何确定与特定于 PSPHV 的重要物理效应相关的参数：非均匀横向沟道掺杂；柯克效应；内部漏极电压钳位；和排水沟膨胀效应。该方法在来自不同技术的设备上得到验证。PSHV 的 Verilog-A 代码是公开可用的。