Thin films with HfO₂/Al₂O₃ laminated structure were prepared by the ALD method in this paper. Typical bipolar resistance switching characteristics were observed in the Pt/HfO₂/Al₂O₃/TiN structure device. The samples were characterized by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The effects of dielectric thickness and different test temperatures on the electrical performance were investigated. Experiments show that when the thickness of HfO₂/Al₂O₃ is 7 nm/3 nm, the electrical properties are the best. As the test temperature increases, the resistance values (R_LRS and R_HRS) of the Pt/HfO₂/Al₂O₃/TiN structure fluctuate more and more. When the test temperature approaches the failure temperature, the device's transition voltages (V_Set and V_Reset) will also become more volatile.

采用ALD法制备了HfO ₂ / Al ₂ O ₃叠层结构的薄膜。在Pt / HfO ₂ / Al ₂ O ₃ / TiN结构器件中观察到典型的双极电阻切换特性。通过X射线光电子能谱（XPS）和原子力显微镜（AFM）对样品进行表征。研究了电介质厚度和不同测试温度对电性能的影响。实验表明，当HfO ₂ / Al ₂ O ₃的厚度为7 nm / 3 nm时，电性能最佳。随着测试温度的升高，电阻值（RPt / HfO ₂ / Al ₂ O ₃ / TiN结构的_LRS和R _HRS）波动越来越大。当测试温度接近故障温度时，器件的转换电压（V _Set和V _Reset）也将变得更加不稳定。