In this article, we study non-trivial topological phase and electron-hole compensation in extremely large magnetoresistance (XMR) material YSb under hydrostatic pressure using first-principles calculations. YSb is topologically trivial at ambient pressure, but undergoes a reentrant topological phase transition under hydrostatic pressure. The reentrant behavior of topological quantum phase is then studied as a function of charge density ratio under pressure. From the detailed investigation of Fermi surfaces, it is found that electron to hole densities ratio increases with pressure, however a non-trivial topological phase appears without perfect electron-hole compensation. The results indicate that the non-trivial topological phase under hydrostatic pressure may not have maximal influence on the magnetoresistance, and need further investigations through experiments to determine the exact relationship between topology and XMR effect.

中文翻译：

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YSb 中非平凡能带拓扑和电子-空穴补偿的研究

在本文中，我们使用第一性原理计算研究了静水压力下超大磁阻 (XMR) 材料 YSb 的非平凡拓扑相位和电子空穴补偿。YSb 在环境压力下在拓扑上是微不足道的，但在静水压力下经历重入拓扑相变。然后研究拓扑量子相的重入行为作为压力下电荷密度比的函数。从费米面的详细研究中发现，电子与空穴的密度比随着压力的增加而增加，但是在没有完美的电子-空穴补偿的情况下出现了非平凡的拓扑相。结果表明，静水压力下的非平凡拓扑相可能不会对磁阻产生最大影响，