As transistor dimensions reach sub-micron scales, new challenges such as power efficiency and radiation effects that were previously negligible, have become a matter of great concern. One of the promising methods to overcome these challenges is a hybrid design based on magnetic tunnel junctions (MTJ) and FinFETs. In this paper, an efficient fully nonvolatile and radiation-hardened cascadable magnetic full-adder (MFA) is proposed based on majority logic. The design has been optimized to achieve high power efficiency and low area overhead. SPICE simulations are carried out using MTJ compact model and 7 ​nm FinFET technology. A comprehensive comparative analysis is reported regarding power, performance, area, nonvolatility, radiation hardness, and process variations. In conclusion, our MFA design has demonstrated improvements in total power consumption, leakage power, and area up to 71%, 64%, and 72%, respectively, while putting forward high-reliability, full nonvolatility, and radiation hardness. These features, present our design as a feasible candidate for the future high reliable and nonvolatile VLSI circuits.

随着晶体管尺寸达到亚微米级，以前可以忽略的新挑战，例如功率效率和辐射效应，已经成为人们非常关注的问题。克服这些挑战的有希望的方法之一是基于磁隧道结（MTJ）和FinFET的混合设计。本文提出了一种基于多数逻辑的高效全非易失性和辐射硬化级联磁性全加器（MFA）。该设计已经过优化，可实现高功率效率和低面积开销。使用MTJ紧凑模型和7纳米FinFET技术进行SPICE仿真。报告了有关功率，性能，面积，非易失性，辐射硬度和工艺变化的全面比较分析。结论，我们的MFA设计已证明总功耗，泄漏功率和面积分别提高了71％，64％和72％，同时提出了高可靠性，完全不挥发和辐射硬度的要求。这些功能使我们的设计成为未来高可靠性和非易失性VLSI电路的可行选择。