Abstract We have demonstrated an effective method to achieve ultra high mobility in the Ge films grown directly on Si (1 0 0) using molecular beam epitaxy (MBE). The Hall effect measurements revealed that the unintentionally doped Ge films have a hole mobility up to 1252 cm2/V·s at room temperature and 3855 cm2/V·s at 80 K. A proper combination of low temperature epitaxy and high temperature post annealing provides the opportunity on defect reduction and interface modulation. The periodic 90° interfacial misfit (IMF) array formed at the Ge/Si interface is believed to contribute to a preferential strain relieve at the interface and the ultra high mobility.

中文翻译：

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通过界面调制直接在 Si (100) 上生长的 Ge 薄膜中的超高空穴迁移率

摘要 我们展示了一种使用分子束外延 (MBE) 在直接在 Si (1 0 0) 上生长的 Ge 薄膜中实现超高迁移率的有效方法。霍尔效应测量表明，无意掺杂的 Ge 薄膜在室温下具有高达 1252 cm2/V·s 的空穴迁移率，在 80 K 下具有高达 3855 cm2/V·s 的空穴迁移率。低温外延和高温后退火的适当组合提供减少缺陷和界面调制的机会。在 Ge/Si 界面形成的周期性 90° 界面错配 (IMF) 阵列被认为有助于界面处的优先应变消除和超高迁移率。