Trap-related phenomena in the electrical performance of back-gated mechanical exfoliated MoS 2 field-effect transistors are investigated in terms of the super linear increase in the drain current under positive gate bias and the shift of transfer curves with gate voltage stress. The super linear increase in drain current is only observed for the MoS 2 field-effect transistors in the electron accumulation regime under positive gate bias, which can be attributed to a trap-assisted tunneling effect with S vacancies at the contact interface between metal Ti and MoS 2 . After thermal annealing of the devices in vacuum at 300 °C for 2 h, the almost complete metallization of Ti contacting with the MoS 2 layer leads to the variation of the drain current relationship with drain voltage from a super linear to a linear increase, thus screening the efficacy of the mechanism of defect level assisted electron tunneling. The shift of transfer curves with ...

中文翻译：

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背栅MoS 2场效应晶体管的电性能中与陷阱相关的现象的观察

研究了背栅机械剥离式MoS 2场效应晶体管在电性能方面的与陷阱相关的现象，即在正栅极偏置下漏极电流超线性增加以及传输曲线随栅极电压应力的变化。仅在正栅偏压下在电子累积状态下观察到MoS 2场效应晶体管的漏极电流超线性增加，这可以归因于在金属Ti与金属之间的接触界面处具有S空位的陷阱辅助隧穿效应。 MoS 2。在真空中于300°C下对器件进行热退火2 h后，Ti与MoS 2层接触的几乎完全金属化导致漏极电流与漏极电压的关系从超线性增加到线性增加，从而筛选了缺陷水平辅助电子隧穿机理的功效。传递曲线的位移随...