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Superconductivity in a hole-doped Mott-insulating triangular adatom layer on a silicon surface
Physical Review Letters ( IF 8.6 ) Pub Date : 
Xuefeng Wu, Fangfei Ming, Tyler S. Smith, Guowei Liu, Fei Ye, Kedong Wang, Steven Johnston, Hanno H. Weitering

Absorption of one-third monolayer of tin on a silicon (111) substrate produces a two-dimensional triangular lattice of Sn atoms. The Sn dangling-bond-derived surface state has a narrow bandwidth and strong Mott-Hubbard correlations. For undoped Si substrates, the Sn monolayer is an antiferromagnetic Mott insulator; however, the system can be modulation-doped using p-type silicon (111) substrates. Here, we show that hole-doped Sn layers on a degenerately doped p-type Si(111) wafer are superconducting with a critical temperature of 4.7 0.3 K, higher than that of bulk Sn or doped Si. The triangular lattice symmetry and strong Mott correlations of the Sn-derived dangling bond surface state strongly suggest that the superconductivity is unconventional and topologically non-trivial. This system is a striking realization of cuprate-like physics on a simple semiconductor platform.

中文翻译:

硅表面上空穴掺杂的Mott绝缘三角吸附原子层中的超导性

在硅(111)衬底上吸收三分之一的单层锡会产生Sn原子的二维三角晶格。Sn悬挂键衍生的表面态具有窄带宽和强Mott-Hubbard相关性。对于未掺杂的Si衬底,Sn单层是反铁磁Mott绝缘体;但是,可以使用p型硅(111)衬底对系统进行调制掺杂。在这里,我们表明,在退化掺杂的p型Si(111)晶片上的掺杂空穴的Sn层是超导的,其临界温度为4.7 0.3 K,高于块状Sn或掺杂的Si的临界温度。Sn衍生的悬空键表面状态的三角形晶格对称性和强Mott相关性强烈表明,超导性是非常规的,并且在拓扑上也很重要。
更新日期:2020-08-10
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