This study reposts the influence of annealing temperature (T_A) on structural and optical properties of ~150 nm thick Ge₂₀Se₇₀Sn₁₀ films. Amorphous Ge₂₀Se₇₀Sn₁₀ films were prepared via thermal evaporation of bulk Ge₂₀Se₇₀Sn₁₀ glass. The films were then annealed between 503 and 703 K leading to the formation of Sn_0.5Ge_0.5Se and Ge₄Se₉ phases. For samples annealed at T_A ≥ 653 K, Sn_0.5Ge_0.5Se phase decomposed to from Ge₄Se₉ phase . Based on the reflectance R(λ) and transmittance T(λ) studies, various optical constants such as the refractive index and extinction coefficient, real and imaginary of dielectric constants among others were investigated. Linear parameters such as the optical band gap decreased (~0.94 eV) as the annealing temperature increased while the Urbach energy reveals contrasting behavior. The oscillator energy and the dispersion energy decreased with increasing T_A. Other electronic parameters such as the Penn gap, electronic polarizability, Fermi energy, VELF, and SELF functions are significantly influenced by T_A.

本研究转播退火温度（影响Ť_甲）上〜150nm厚的Ge的结构和光学性质₂₀硒₇₀的Sn ₁₀薄膜。通过块状Ge ₂₀ Se ₇₀ Sn ₁₀玻璃的热蒸发来制备非晶Ge ₂₀ Se ₇₀ Sn ₁₀膜。然后将薄膜在503和703 K之间退火，从而形成Sn _0.5 Ge _0.5 Se和Ge ₄ Se ₉相。在退火样品 Ť_甲 ≥653 K，Sn的_0.5葛_0.5Se从Ge ₄ Se ₉相分解为Se 。基于反射率R（λ）和透射率T（λ）的研究，研究了各种光学常数，例如折射率和消光系数，介电常数的实部和虚部。线性参数（如光学带隙）随着退火温度的升高而降低（约0.94 eV），而Urbach能量则表现出相反的行为。振荡器能量和色散能量随着T _A的增加而减小。诸如Penn间隙，电子极化率，费米能量，VELF和SELF功能等其他电子参数受以下因素的影响很大牛逼_一个。