A novel direct matching network (MN) synthesis method improving the conventional simplified real frequency technique (SRFT) is presented in this article. By straightforwardly optimize the characteristic impedance (physical width) and electrical length (physical length) of each distributed element in a preselected configuration, the proposed method has one more degree of design freedom by comparison with the SRFT, and therefore increases design flexibility and matching effects. To demonstrate its effectiveness, a broadband class‐J power amplifier (PA) is devised for which both the input and output MNs are realized using the proposed method. The simultaneous manipulation of fundamental and second harmonic impedances is successfully realized by defining a novel target function that indicates the degree of proximity for the realized impedances to the optimal transistor impedances. Comprehensive equations and complete design procedures of the new technique are given. The measured class‐J PA implemented for verification achieves an output power of 39.2 to 42.3 dBm and power‐added efficiency of 61.8% to 71.6% over the frequency range of 2.5 to 3.8 GHz using a 10‐W GaN HEMT. A 20‐MHz LTE‐A signal is employed to validate the linearization capability of this class‐J PA. An adjacent channel leakage ratio level around −43.8 dBc is achieved after utilizing digital predistortion technique.

中文翻译：

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一种新颖的直接匹配网络合成技术及其在宽带J类功率放大器中的应用

本文提出了一种新颖的直接匹配网络（MN）合成方法，该方法改进了传统的简化实频技术（SRFT）。通过直接优化预选配置中每个分布式元件的特性阻抗（物理宽度）和电气长度（物理长度），与SRFT相比，该方法具有更大的设计自由度，因此提高了设计灵活性和匹配效果。为了证明其有效性，设计了宽带J类功率放大器（PA），使用所提出的方法可同时实现输入和输出MN。通过定义一个新的目标函数可以成功实现基本和二次谐波阻抗的同时操作，该目标函数指示实现的阻抗与最佳晶体管阻抗的接近程度。给出了新技术的综合方程和完整的设计程序。使用10W GaN HEMT，在2.5至3.8 GHz的频率范围内，用于验证的测得的J类功率放大器实现了39.2至42.3 dBm的输出功率和61.8％至71.6％的功率附加效率。采用20 MHz LTE-A信号来验证此J类PA的线性化能力。利用数字预失真技术后，可实现约-43.8 dBc的相邻信道泄漏率水平。给出了新技术的综合方程和完整的设计程序。使用10W GaN HEMT，在2.5至3.8 GHz的频率范围内，用于验证的测得的J类功率放大器实现了39.2至42.3 dBm的输出功率和61.8％至71.6％的功率附加效率。采用20 MHz LTE-A信号来验证此J类PA的线性化能力。利用数字预失真技术后，可实现约-43.8 dBc的相邻信道泄漏率水平。给出了新技术的综合方程和完整的设计程序。使用10W GaN HEMT，在2.5至3.8 GHz的频率范围内，用于验证的测得的J类功率放大器实现了39.2至42.3 dBm的输出功率和61.8％至71.6％的功率附加效率。采用20 MHz LTE-A信号来验证此J类PA的线性化能力。利用数字预失真技术后，可实现约-43.8 dBc的邻道泄漏比水平。