This letter presents a fully integrated two-stage monolithic microwave integrated circuit (MMIC) power amplifier (PA) with a 1:1 transformer balun in Taiwan Semiconductor Manufacturing Company (TSMC) 180-nm CMOS process. To optimize the performance of PA, an on-chip 1:1 turn spiral transformer balun (STB) was used with a high supply power through the cascode topology. The proposed PA achieved a 40–43-dB gain and a saturation power ( $P_{\mathrm {sat}}$ ) of 29.9–30.3 dBm with a 40%–45% of power-added efficiency (PAE) in the frequency range of 820–1000 MHz. Using the antiphase biasing technique, the PA achieves a linear output power of 25 dBm with 29.5% PAE in 20-MHz spacing two-tone measurement, which satisfies IMD₃ < −25 dBc. The measured 1-dB compression point was 28.1 dBm. Furthermore, the proposed PA occupied a core area of $3.3\times 0.86\,\,{\mathrm {mm}}^{2}$ .

中文翻译：

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采用 180 纳米 CMOS 中的 1:1 变压器巴伦的 1W、高增益、高效率和紧凑型 Sub-GHz 线性功率放大器

这封信展示了采用台积电 (TSMC) 180 纳米 CMOS 工艺的具有 1:1 变压器巴伦的完全集成的两级单片微波集成电路 (MMIC) 功率放大器 (PA)。为了优化 PA 的性能，通过共源共栅拓扑使用具有高电源功率的片上 1:1 匝螺旋变压器巴伦 (STB)。提议的 PA 实现了 40–43 dB 的增益和饱和功率（ $P_{\mathrm {sat}}$ ) 为 29.9–30.3 dBm，在 820–1000 MHz 频率范围内具有 40%–45% 的功率附加效率 (PAE)。使用反相偏置技术，PA 在 20 MHz 间距双音测量中实现了 25 dBm 的线性输出功率和 29.5% 的 PAE，满足 IMD ₃ < -25 dBc。测得的 1-dB 压缩点为 28.1 dBm。此外，拟议的 PA 占据了核心区域 $3.3\times 0.86\,\,{\mathrm {mm}}^{2}$ .