This letter presents a compact ${W}$ -band frequency tripler implemented in a 0.13- $\mu \text{m}$ SiGe BiCMOS technology. It uses a single-balanced differential pair core overdriven as Class A amplifiers. The usage of a single-stage multiplication without any additional amplifying stage along with the on-chip transformer baluns for single-ended to differential conversions at the input and the output improves efficiency, at the same time enabling a compact design. The third-order harmonic is further improved by enhancing the second-order harmonic at the common node of the differential pair, which in turn mixes with the input and contributes to the third-order harmonic. The tripler generates a saturated output power of 2.9 dBm at 84 GHz with fractional 3-dB bandwidth of 25.6%, ranging from 75 to 96 GHz and an in-band fourth-harmonic suppression of more than 20 dBc. The chip occupies an area of $435\,\,\mu \text{m}\,\,{\times }\,\,560\,\,\mu \text{m}$ (0.24 mm²) and consumes 88 mW from a 3.3-V power supply.

中文翻译：

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使用单平衡拓扑的紧凑型 W 波段三倍频器

这封信提出了一个紧凑的 ${W}$ -频段频率三倍器在 0.13 中实现- $\mu \text{m}$ SiGe BiCMOS 技术。它使用单平衡差分对核心过驱动作为 A 类放大器。使用单级乘法而无需任何额外的放大级以及用于在输入和输出处进行单端到差分转换的片上变压器巴伦提高了效率，同时实现了紧凑的设计。通过增强差分对公共节点处的二次谐波进一步改善三次谐波，二次谐波又与输入混合并形成三次谐波。三倍频器在 84 GHz 下产生 2.9 dBm 的饱和输出功率，3-dB 部分带宽为 25.6%，范围从 75 到 96 GHz，带内四次谐波抑制超过 20 dBc。该芯片占用面积为 $435\,\,\mu \text{m}\,\,{\times }\,\,560\,\,\mu \text{m}$ (0.24 mm ² ) 并从 3.3V 电源消耗 88 mW。