Quantum dot lasers are excellent on-chip light sources, offering high defect tolerance, low threshold, low temperature variation, and high feedback insensitivity. Yet a monolithic integration technique combining epitaxial quantum dot lasers with passive waveguides has not been demonstrated and is needed for complex photonic integrated circuits. We present here, for the first time to our knowledge, a monolithc offset quantum dot integration platform that permits formation of a laser cavity utilizing both the robust quantum dot active region and the versatility of passive GaAs waveguide structures. This platform is substrate agnostic and therefore compatible with the quantum dot lasers directly grown on Si. As an illustration of the potential of this platform, we designed and fabricated a 20 GHz mode-locked laser with a dispersion-engineered on-chip waveguide mirror. Due to the dispersion compensation effect of the waveguide mirror, the pulse width of the mode-locked laser is reduced by a factor of 2.8.

中文翻译：

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集成色散补偿锁模量子点激光器

量子点激光器是出色的片上光源，具有高缺陷容限、低阈值、低温度变化和高反馈不敏感性。然而，尚未证明将外延量子点激光器与无源波导相结合的单片集成技术，复杂的光子集成电路需要这种技术。据我们所知，我们在这里首次展示了一种单片偏移量子点集成平台，该平台允许利用强大的量子点有源区和无源 GaAs 波导结构的多功能性来形成激光腔。该平台与基板无关，因此与直接在硅上生长的量子点激光器兼容。作为该平台潜力的例证，我们设计并制造了具有色散设计的片上波导反射镜的 20 GHz 锁模激光器。由于波导镜的色散补偿作用，锁模激光器的脉冲宽度减小了2.8倍。