Perspectives about growth of bulk gallium nitride crystals, fabricating high structural quality gallium nitride wafers and the market demand for them are presented. Three basic crystal growth technologies, halide vapor phase epitaxy, sodium flux, and ammonothermal, are described. Their advantages and disadvantages, recent development, and possibilities are discussed. The main difficulty with crystallization of thick GaN is determined. Some new solutions for bulk growth are proposed. It is shown that only crystallization on high structural quality native seeds will ensure proper progress. New ideas for fabricating gallium nitride crystals and wafers with a better control of their structural properties and point defect concentration are proposed.

中文翻译：

---

块状 GaN 晶体的生长

提出了关于块状氮化镓晶体生长、制造高结构质量氮化镓晶片及其市场需求的前景。描述了三种基本的晶体生长技术，卤化物气相外延、钠通量和氨热。讨论了它们的优点和缺点、最近的发展和可能性。确定了厚 GaN 结晶的主要困难。提出了一些新的批量增长解决方案。结果表明，只有在高结构质量的天然种子上结晶才能确保适当的进展。提出了制造氮化镓晶体和晶片的新思路，可以更好地控制它们的结构特性和点缺陷浓度。