We consider the possibility of difference frequency generation in the GaAs phonon reststrahlen band within dual-chip GaAs-based lasers at room temperature. Sufficient generation efficiency is achieved via the resonant increase of GaAs second order nonlinear susceptibility in this spectral range. The outcoupling power conversion efficiency is anticipated to be up to 4 × 10−7 W−1 in the laser design studied.

中文翻译：

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双芯片GaAs基激光器中GaAs声子reststrahlen带中差频产生的可能性

我们考虑了室温下双芯片 GaAs 基激光器中 GaAs 声子reststrahlen 带中产生差频的可能性。通过在该光谱范围内 GaAs 二阶非线性磁化率的共振增加，实现了足够的发电效率。在所研究的激光器设计中，外耦合功率转换效率预计高达 4 × 10-7 W-1。