Si/Ge nanostructures have attracted much attention since they are compatible with current microelectronics technology. The geometry and composition variations can be used to tune their electronic properties. Here, we introduce a 3D Si/Ge superlattice, metalattice, made of more volumetric meta-atoms and thinner metabonds between them. Its size varies from a few tens to hundreds of nanometers and can be taken as a mesoscale physics platform. We intend to bring a metallic character to such an alloy metalattice. This requires that the quantum confinement and chemical composition act in a complementary way. The tight-binding method is employed and it is confirmed that a 3D uniform density of states across the whole metalattice is possible. Search for the preferred electronic structure now transforms to the problem of finding the appropriate geometry.

中文翻译：

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3D 14 nm Si/Ge 合金金属晶格的电子态密度工程

Si/Ge 纳米结构由于与当前的微电子技术兼容而备受关注。几何形状和成分变化可用于调整它们的电子特性。在这里，我们介绍了 3D Si/Ge 超晶格，即金属晶格，由体积更大的超原子和它们之间更薄的超键组成。它的大小从几十纳米到几百纳米不等，可以作为一个中尺度物理平台。我们打算为这种合金金属晶格带来金属特性。这要求量子限制和化学成分以互补的方式起作用。采用紧束缚方法，并证实在整个金属晶格上有可能形成 3D 均匀的态密度。寻找首选的电子结构现在转变为寻找合适的几何形状的问题。