This work investigates the optical and interfacial properties of epitaxially fused direct GaInP/Si heterojunctions realized by the corrugated epitaxial lateral overgrowth (CELOG) approach. To provide a broad analysis of the above heterojunction, photoluminescence (PL), cathodoluminescence (CL), Raman, and high-resolution transmission electron microscopy (TEM) were employed in this study. The enhanced luminescence intensity was observed in the direct GaInP/Si heterojunction in the cross-sectional CL because of the reduced defect density in the CELOG GaInP. The spatial resolution dependent PL and CL spectra of GaInP on Si yielded the composition variation of GaInP arising from the anisotropic growth behavior of CELOG. The Ga composition, x, in GaxIn1−xP/Si at the interface deduced from the lattice constant measured by TEM has a good agreement with the results of PL and CL. Low thermal and lattice mismatch strain in CELOG GaInP on Si were revealed by the Raman spectra. TEM investigation further revealed the atomic structure of some planar defects in CELOG GaInP over Si. It is confirmed that although a thin atomic disorder was observed on the surface of Si substrate, an epitaxially fused GaInP/Si heterojunction with a reduced threading dislocation density of ∼6.4 × 107 cm−2 in comparison to ∼4.8 × 108 cm−2 in the InP seed on Si has been successfully fabricated by the CELOG technique despite about 4% lattice mismatch between GaInP and Si. The findings of this study demonstrate the great potential of the CELOG technique for promoting monolithic integration of III-V/Si-based optoelectronics.

中文翻译：

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外延熔融 GaInP/Si 异质结的光学和界面特性

这项工作研究了通过波纹外延横向过度生长 (CELOG) 方法实现的外延熔融直接 GaInP/Si 异质结的光学和界面特性。为了对上述异质结进行广泛的分析，本研究采用了光致发光 (PL)、阴极发光 (CL)、拉曼和高分辨率透射电子显微镜 (TEM)。由于 CELOG GaInP 中的缺陷密度降低，因此在横截面 CL 的直接 GaInP/Si 异质结中观察到增强的发光强度。空间分辨率依赖于 Si 上的 GaInP 的 PL 和 CL 光谱产生了由 CELOG 的各向异性生长行为引起的 GaInP 的组成变化。Ga 组成，x，在 GaxIn1−xP/Si 界面处，由 TEM 测量的晶格常数推导出来，与 PL 和 CL 的结果有很好的一致性。拉曼光谱揭示了硅上 CELOG GaInP 中的低热和晶格失配应变。TEM 研究进一步揭示了 Si 上 CELOG GaInP 中一些平面缺陷的原子结构。已经证实，虽然在 Si 衬底表面观察到薄的原子无序，但与 4.8 × 108 cm-2 相比，外延融合的 GaInP/Si 异质结的穿透位错密度降低了 ∼6.4 × 107 cm-2尽管 GaInP 和 Si 之间存在约 4% 的晶格失配，但通过 CELOG 技术成功地制造了 Si 上的 InP 种子。