Metal–organic or all-inorganic Sb(V) bromide complexes are a novel class of semiconductor materials with potential use in optoelectronic devices. The implementation of these materials for optoelectronics is currently prohibited by their poor thermal stability and crippling solvent compatibility issues. Here, we address these limitations by introducing a new method for the synthesis of Sb(V) bromide complexes and thin films. The “post-deposition bromination” method presented here enables the fabrication of presumably any Sb(V) complex not previously accessible as thin films. We screen a set of Sb(V) bromides, identifying two promising candidate materials incorporating tetraethylammonium (TEA) or 2-chloro-N-methylpyridinium (CNMP). To prove the validity of the methods introduced in this work, we fabricate high-quality thin films of these complexes for the first time. Thin films of these materials are stable up to 110 °C (based on TGA measurements), which is significantly higher than the previously reported state-of-the-art complex from N-ethylpyridinium (NEP, approx. 50 °C). Additionally, cation dependent band gap tunability is observed with thin films of the novel complexes having a direct band gap at 2.20 (CNMP) and 2.55 eV (TEA) as determined by optical analysis. The methodology introduced in this study provides an unprecedented platform for research into metal-organic Sb(V) thin film materials.

中文翻译：

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钙钛矿激发的高稳定性有机金属锑（V）卤化物薄膜的沉积后溴化

金属有机或全无机Sb（V）溴化物络合物是一类新型的半导体材料，有可能在光电子设备中使用。由于其差的热稳定性和严重的溶剂相容性问题，目前禁止将这些材料用于光电子学。在这里，我们通过介绍一种合成Sb（V）溴化物配合物和薄膜的新方法来解决这些局限性。此处介绍的“沉积后溴化”方法可以制造以前无法以薄膜形式获得的任何Sb（V）络合物。我们筛选了一组Sb（V）溴化物，确定了结合四乙铵（TEA）或2-氯-N的两种有前途的候选材料-甲基吡啶鎓（CNMP）。为了证明本文引入的方法的有效性，我们首次制造了这些配合物的高质量薄膜。这些材料的薄膜在高达110°C的温度下是稳定的（基于TGA测量），这大大高于先前报道的N-乙基吡啶鎓（NEP，约50°C）的最新络合物。另外，通过光学分析测定，在具有2.20（CNMP）和2.55eV（TEA）的直接带隙的新型配合物的薄膜中观察到阳离子依赖性带隙可调谐性。这项研究中介绍的方法为金属有机Sb（V）薄膜材料的研究提供了前所未有的平台。