An innovative capacitive radio frequency MEMS shunt switch with a unique shaped spring is designed and analyzed using COMSOL Multiphysics 5.4. The proposed switch using Hafnium oxide (HfO₂) and Niobium pentoxide (Nb₂O₅) as the dielectric material between the transmission line and the deflecting gold membrane provides certain advantageous benefits with respect to performance parameters such as low actuation voltage, less spring constant, good isolation, low insertion loss, small size, and high capacitance ratio compared to other designs. A combination of three‐turn meander and C‐ shaped spring having a spring constant of 0.186 N/m helps in achieving convenient actuation voltage. For 1, 1.5, and 2 μm air gaps, the actuation voltages required to bring the switch to ON mode are 1.77, 3.24, and 4.96 V respectively with Nb₂O₅ as the dielectric layer and 1.8, 3.28, and 5.01 V respectively with HfO₂ as the dielectric layer respectively. At 2‐μm air gap, the capacitance ratio is 329 for Nb₂O₅ and 113 for HfO₂. RF analysis using ANSYS HFSS software shows the isolation of −19.41 dB at 11 GHz and insertion loss as low as −0.27 dB at 15 GHz. The proposed switch operating within the range of 1 to 30 GHz gives optimum results compared to other devices and is suitable for wireless communication and satellite payload applications.

中文翻译：

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基于Nb2O5和HfO2电介质的增强型电容式射频MEMS开关的设计和分析，用于卫星有效载荷应用

使用COMSOL Multiphysics 5.4设计和分析了具有独特形状弹簧的创新型电容式射频MEMS分流开关。建议使用氧化switch（HfO ₂）和五氧化_二铌（Nb ₂ O ₅）的开关），因为传输线和偏转金膜之间的介电材料在性能参数方面具有某些优势，例如与其他驱动器相比，驱动电压低，弹簧常数小，隔离度好，插入损耗小，尺寸小和电容率高设计。三圈曲折和C形弹簧（弹簧常数为0.186 N / m）的组合有助于获得方便的驱动电压。对于1、1.5和2μm的气隙，以Nb ₂ O ₅作为电介质层，将开关切换到ON模式所需的驱动电压分别为1.77、3.24和4.96 V，而对于Nb ₂ O ₅，分别为1.8、3.28和5.01 V HfO ₂分别作为介电层。在2μm的气隙下，Nb ₂ O ₅的电容比为329 ，HfO ₂的电容比为113 。使用ANSYS HFSS软件进行的RF分析显示，在11 GHz处的隔离度为−19.41 dB，在15 GHz处的插入损耗低至−0.27 dB。与其他设备相比，建议的开关在1至30 GHz的频率范围内工作可提供最佳结果，并且适用于无线通信和卫星有效载荷应用。