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Analytical modeling of subthreshold current and swing of strained‐Si graded channel dual material double gate MOSFET with interface charges and analysis of circuit performance
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields ( IF 1.6 ) Pub Date : 2020-08-06 , DOI: 10.1002/jnm.2791
Subba Rao Suddapalli 1 , Bheema Rao Nistala 1
Affiliation  

In this paper, a two‐dimensional (2‐D) center channel potential based subthreshold current (SC) and subthreshold swing (SS) are developed analytically for strained‐Si (s‐Si) graded‐channel dual‐material double gate (GC‐DMDG) MOSFET with interface charges. The proposed analytical model is extracted by solving 2‐D Poisson equation in s‐Si graded‐channel using appropriate boundary conditions. The analytical 2‐D model includes effects of various MOSFET parameters such as s‐Si channel length, strain in the silicon substrate, and oxide interface charge density with damaged length by extensively analyzing channel potential, SC, and SS. Also, the subthreshold characteristics of the proposed s‐Si GC‐DMDG MOSFET demonstrate superior performance over s‐Si graded channel double gate MOSFET. The numerical results obtained using TCAD of the proposed DG MOSFET are validated with the results attained from proposed analytical model. Moreover, the performance of CMOS inverter using s‐Si GC‐DMDG MOSFET is evaluated for different device parameters. It is investigated that the proposed s‐Si GC‐DMDG MOSFET has better noise margin than s‐Si GC‐DG MOSFET.

中文翻译:

具有接口电荷的应变Si渐变沟道双材料双栅极MOSFET的亚阈值电流和摆幅的分析模型以及电路性能分析

本文针对应变Si(s-Si)渐变通道双材料双栅极(GC)分析性地开发了基于二维(2-D)中心通道电势的亚阈值电流(SC)和亚阈值摆幅(SS) ‐DMDG)带有接口电荷的MOSFET。通过使用适当的边界条件在s-Si渐变通道中求解二维Poisson方程来提取所提出的分析模型。通过广泛地分析沟道电势,SC和SS,二维分析模型包括各种MOSFET参数的影响,例如s-Si沟道长度,硅基板中的应变以及长度受损的氧化物界面电荷密度。同样,拟议中的s-Si GC-DMDG MOSFET的亚阈值特性表现出优于s-Si渐变沟道双栅极MOSFET的性能。利用建议的解析模型获得的结果验证了使用建议的DG MOSFET的TCAD获得的数值结果。此外,针对不同的器件参数,评估了使用s-Si GC-DMDG MOSFET的CMOS反相器的性能。研究表明,所建议的s-Si GC-DMDG MOSFET具有比s-Si GC-DG MOSFET更好的噪声容限。
更新日期:2020-08-06
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