Ferroelectric memories with ultralow‐power‐consumption are attracting a great deal of interest with the ever‐increasing demand for information storage in wearable electronics. However, sufficient scalability, semiconducting compatibility, and robust flexibility of the ferroelectric memories remain great challenges, e.g., owing to Pb‐containing materials, oxide electrode, and limited thermal stability. Here, high‐performance flexible nonvolatile memories based on ferroelectric Hf_0.5Zr_0.5O₂ (HZO) via quasi‐van der Waals heteroepitaxy are reported. The flexible ferroelectric HZO exhibits not only high remanent polarization up to 32.6 µC cm⁻² without a wake‐up effect during cycling, but also remarkably robust mechanical properties, degradation‐free retention, and endurance performance under a series of bent deformations and cycling tests. Intriguingly, using HZO as a gate, flexible ferroelectric thin‐film transistors with a low operating voltage of ±3 V, high on/off ratio of 6.5 × 10⁵, and a small subthreshold slope of about 100 mV dec⁻¹, which outperform reported flexible ferroelectric transistors, are demonstrated. The results make ferroelectric HZO a promising candidate for the next‐generation of wearable, low‐power, and nonvolatile memories with manufacturability and scalability.

中文翻译：

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用于集成高性能非易失性存储器的柔性准范德华铁电铪基氧化物

随着可穿戴电子产品对信息存储的需求不断增长，具有超低功耗的铁电存储器引起了人们的极大兴趣。然而，由于含铅材料、氧化物电极和有限的热稳定性，铁电存储器的足够的可扩展性、半导体兼容性和鲁棒的灵活性仍然是巨大的挑战。在此，报道了通过准范德华异质外延的基于铁电 Hf _0.5 Zr _0.5 O ₂ (HZO)的高性能柔性非易失性存储器。柔性铁电HZO不仅表现出高达32.6 µC cm ^-2的高剩磁极化，并且在循环过程中没有唤醒效应，而且在一系列弯曲变形和循环测试下具有非常稳健的机械性能、无降解保留和耐久性能。有趣的是，使用HZO作为栅极，柔性铁电薄膜晶体管具有±3 V的低工作电压、6.5 × 10 ^{5的高开/关比和约100 mV dec -1}的小亚阈值斜率，其性能优于展示了报道的柔性铁电晶体管。这些结果使铁电 HZO 成为具有可制造性和可扩展性的下一代可穿戴、低功耗和非易失性存储器的有希望的候选者。