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Fabrication of high-performance SiO2@p-CuO/n-Si core-shell structure based photosensitive diode for photodetection application
Surfaces and Interfaces ( IF 6.2 ) Pub Date : 2020-09-01 , DOI: 10.1016/j.surfin.2020.100622
S. Gunasekaran , D. Thangaraju , R. Marnadu , J. Chandrasekaran , T. Alshahrani , Mohd Shkir , A. Durairajan , M.P.F. Graça , M. Elango

Abstract Core-shell SiO2@p-CuO semiconductor composite structure-based junction diodes were fabricated by using a metal oxide semiconducting material. The core-shell SiO2@p-CuO composite structure was successfully fabricated by co-precipitation route. X-ray diffraction (XRD) and Raman spectroscopy is used to inspect the structure & vibrational modes. Field Emission SEM (FE-SEM) was used to analyse the morphology. XRD confirms the existence of monoclinic structure in the pure CuO and SiO2@p-CuO and Raman studies further establish the formation of a single-phase structure in annealed samples. Crossed nanoflakes-like surface morphology of CuO and formation of core-shell SiO2@p-CuO structure was verified with FE-SEM micrographs. Fabricated SiO2@p-CuO/n-Si junction diode shows better photo-response along with a better ideality factor of 3.96 under a light condition than the p-CuO/n-Si. The photosensitivity, responsivity, external quantum efficiency, and detectivity of the developed SiO2@p-CuO/n-Si diodes is estimated ~ 580,471.4%, ~ 259.7 mA/W, ~ 100.7%, 1.715 × 1012 Jones, respectively which are several times larger than the bare p-CuO/n-Si, which are estimated ~ 5320.3%, ~ 230.6 mA/W, ~ 89.4% and 1.561 × 1011 Jones, respectively. The enhanced photodetection properties of SiO2@p-CuO/n-Si diode proposes it as a mesmerizing aspirant for photodetector application.

中文翻译:

用于光电检测应用的高性能 SiO2@p-CuO/n-Si 核壳结构光敏二极管的制备

摘要 采用金属氧化物半导体材料制备了核壳型SiO2@p-CuO半导体复合结构结型二极管。通过共沉淀法成功制备了核壳SiO2@p-CuO复合结构。X 射线衍射 (XRD) 和拉曼光谱用于检查结构和振动模式。场发射扫描电镜(FE-SEM)用于分析形态。XRD 证实纯 CuO 和 SiO2@p-CuO 中存在单斜结构,拉曼研究进一步确定了退火样品中单相结构的形成。用FE-SEM显微照片验证了CuO的交叉纳米薄片状表面形态和核壳SiO2@p-CuO结构的形成。制造的 SiO2@p-CuO/n-Si 结二极管显示出更好的光响应以及更好的理想因子 3。96 在光照条件下比 p-CuO/n-Si 好。所开发的 SiO2@p-CuO/n-Si 二极管的光敏度、响应度、外量子效率和探测率估计分别为 ~ 580,471.4%, ~ 259.7 mA/W, ~ 100.7%, 1.715 × 1012 Jones,分别为数倍比裸 p-CuO/n-Si 大,估计分别为 ~ 5320.3%、~ 230.6 mA/W、~ 89.4% 和 1.561 × 1011 Jones。SiO2@p-CuO/n-Si 二极管增强的光电探测特性使其成为光电探测器应用的迷人追求者。分别为 3%、~230.6 mA/W、~89.4% 和 1.561 × 1011 Jones。SiO2@p-CuO/n-Si 二极管增强的光电探测特性使其成为光电探测器应用的迷人追求者。分别为 3%、~230.6 mA/W、~89.4% 和 1.561 × 1011 Jones。SiO2@p-CuO/n-Si 二极管增强的光电探测特性使其成为光电探测器应用的迷人追求者。
更新日期:2020-09-01
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