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Synthesis of magnesium nitride films with BN as protective layers by reactive radio-frequency magnetron sputtering
Thin Solid Films ( IF 2.1 ) Pub Date : 2020-10-01 , DOI: 10.1016/j.tsf.2020.138271
Shuai Wang , Xi Chen , Xiaohang Liu , Zhanguo Chen , Xiuhuan Liu , Jihong Zhao , Lingying Qiu , Lixin Hou , Yanjun Gao

Abstract Magnesium nitride films were synthesized on silicon substrates by reactive radio-frequency magnetron sputtering (13.56 MHz) with a high-purity magnesium target and nitrogen as the working gas. The effects of the sputtering power and the growth temperature on the qualities of Mg3N2 films were investigated. As for Mg3N2 films synthesized at 773 K for 2 h with the sputtering power of 200 W, the intense Raman peak at 381 cm-1 with the Full width at half maximum of 8.3 cm-1 and the sharp X-Ray Diffraction peak of Mg3N2 (222) at 2θ=31.1° were observed, and the ultraviolet-visible absorption spectra showed that the prepared Mg3N2 films have the intrinsic absorption edges of about 480 nm and the optical bandgap of 2.62 eV. Moreover, it was demonstrated that Boron nitride films can be used as not only protective layers to effectively prevent Mg3N2 films from being hydrolyzed, but also good optical windows.

中文翻译:

反应射频磁控溅射法合成以氮化硼为保护层的氮化镁薄膜

摘要 以高纯镁靶材和氮气为工作气体,采用反应射频磁控溅射(13.56 MHz)在硅衬底上合成氮化镁薄膜。研究了溅射功率和生长温度对Mg3N2薄膜质量的影响。至于在 773 K、200 W 溅射功率下合成的 Mg3N2 薄膜,381 cm-1 处的强拉曼峰,半峰全宽为 8.3 cm-1,以及 Mg3N2 的尖锐 X 射线衍射峰在2θ=31.1°处观察到(222),紫外-可见吸收光谱表明制备的Mg3N2薄膜的本征吸收边约为480 nm,光学带隙为2.62 eV。而且,
更新日期:2020-10-01
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